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 MCC
Features
* * * Low Current Leakage Compression Bond Construction Low Cost


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1N4154
500mW 35 Volt Silicon Epitaxial Diode
DO-35
Maximum Ratings
* * * Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C Maximum Thermal Resistance; 300C/W Junction To Ambient
Electrical Characteristics @ 25C Unless Otherwise Specified
Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR VRM IO PTOT TJ IFSM 25V 35V 150mA 500mW 200C 500mA 8.3ms, half sine Resistive Load f > 50Hz
D
A Cathode Mark B D
C
VF
1.0V
IFM = 30mA; TJ = 25C* VR=25Volts TJ = 25C Measured at 1.0MHz, VR=4.0V IF=10mA VR = 6V RL=100
DIM A B C D INCHES MIN ------1.000
IR
100nA
DIMENSIONS MM MIN ------25.40
CJ Trr
4pF 4nS
MAX .166 .079 .020 ---
MAX 4.2 2.00 .52 ---
NOTE
*Pulse test: Pulse width 300 sec, Duty cycle 2%
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1N4154
Figure 1 Typical Forward Characteristics 200 100 60 40 500 20 MilliAmps 10 6 4 2 25C 1 .6 .4 .2 .1 .5 .7 .9 Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts 1.1 1.3 1.5 0 100 400 600
MCC
Figure 2 Forward Derating Curve
300 MilliWatts 200
Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 50 75 100 C 125 150 175
Admissable Power Dissipation - MilliWatts versus Ambient Temperature - C
Figure 3 Junction Capacitance
10 6 4 2 pF TJ=25C 1 .6 .4 .2 .1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000
Junction Capacitance - pF versus Reverse Voltage - Volts
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1N4154
Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 60 40 20 10 NanoAmps 6 4 2 1 .6 .4 .2 .1 20 40 60 TJ Instantaneous Reverse Leakage Current - NanoAmperes versus Junction Temperature - C 80 100 120 140 TA=25C MilliAmps 600 500 400 300 200 100 0 1 6
MCC
Figure 5 Peak Forward Surge Current
2
4
8 10 Cycles
20
40
60 80 100
Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - Cycles
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